COUPLET: Coupled Electrothermal Simulation
نویسندگان
چکیده
The aim of the project COUPLET (supported by Institut Farman) is to study the electrothermal effects of the degradation of the metallisation layer of power semiconductor dies. In this first technical report of the project, we describe our work of modeling and simulation of the behavior of a power transistor. The die is represented by four elementary transistors driven by a distributed gate signal. A simplified electrical model is used to simulate the transistor behavior at turn-off. The thermal model is realized by finite elements methods and allows to estimate the maximum temperature on each elementary transistor. By coupling the thermal model with the electric simulation, it is possible to take into account silicon and metallisation heating in the electrical model.
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